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MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
FS50KM-06
OUTLINE DRAWING
10 0.3
6.5 0.3 3 0.3
Dimensions in mm
2.8 0.2
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
E
0.75 0.15
2.54 0.25
2.54 0.25
4.5 0.2
123
2.6 0.2
10V DRIVE VDSS .................................................................................. 60V rDS (ON) (MAX) .............................................................. 22m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 65ns Viso ................................................................................ 2000V
w
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100H VGS = 0V VDS = 0V
Conditions
Ratings 60 20 50 200 50 50 200 30 -55 ~ +150
Unit V V A A A A A W C C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
-55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 17 0.43 32 2300 570 280 35 95 95 80 1.0 -- 65 Max. -- 0.1 0.1 4.0 22 0.55 -- -- -- -- -- -- -- -- 1.5 4.17 --
Unit V A mA V m V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
tw = 10ms
40
30
100ms 1ms 10ms 100ms
20
10
0
0
50
100
150
200
100 7 TC = 25C DC 5 Single Pulse 3 0 2 3 5 7 101 2 3 5 7 102 2 3 3 5 710 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
10V 8V VGS = 20V 7V 6V
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 8V
DRAIN CURRENT ID (A)
80
TC = 25C Pulse Test
DRAIN CURRENT ID (A)
7V
40
60
30
PD = 30W
6V
40
20
5V TC = 25C Pulse Test
20
PD = 30W
5V
10
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50
TC = 25C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
1.6
40
1.2
ID = 80A
30
0.8
50A
20
VGS = 10V 20V
0.4
20A
10 0
0
0
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
TC = 25C 75C 125C
DRAIN CURRENT ID (A)
60
40
20
FORWARD TRANSFER ADMITTANCE yfs (S)
80
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2
Tch = 25C VGS = 0V f = 1MHZ Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
td(off) Tch = 25C VDD = 30V VGS = 10V RGEN = RGS = 50
103 7 5 3 2 102 7 5 3 2
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
Coss Crss
102 7 5 4 3 2
tf tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101 0 10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50KM-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
20
Tch = 25C ID = 50A
16
VDS = 10V
SOURCE CURRENT IS (A)
80
TC = 125C
12
20V 40V
60
8
40
75C 25C
4
20
0
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 5.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
4.0
3.0
2.0
1.0
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2 0.2 100 7 PDM 5 3 0.1 tw 2 0.05 T 10-1 0.02 7 0.01 D= tw 5 T Single Pulse 3 2 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)

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